2N3773 PDF

It often has a transition frequency of around 3. The frequency at which gain begins to drop off may be much lower, see below. Maximum Ratings[ edit ] The maximum collector-to-emitter voltage for the 2N, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of the transistor; with ohms a 70 volt breakdown rating, VCER, and the Collector-Emitter Sustaining voltage, VCEO sus , is given by ON Semiconductor. Sometimes the VCBO breakdown voltage the maximum voltage between collector and base, with the emitter open, an unrealistic arrangement in practical circuits is given as the only voltage rating, which can cause confusion. The total power dissipation written PD in most American datasheets, Ptot in European ones depends on the heatsink to which the 2N is connected. The device is designed to operate with an efficient heatsink, but care must be taken to mount the device properly, [7] [8] [9] else physical damage or worsened power handling may result, especially with cases or heatsinks that are not perfectly flat.

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It often has a transition frequency of around 3. The frequency at which gain begins to drop off may be much lower, see below. Maximum Ratings[ edit ] The maximum collector-to-emitter voltage for the 2N, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of the transistor; with ohms a 70 volt breakdown rating, VCER, and the Collector-Emitter Sustaining voltage, VCEO sus , is given by ON Semiconductor.

Sometimes the VCBO breakdown voltage the maximum voltage between collector and base, with the emitter open, an unrealistic arrangement in practical circuits is given as the only voltage rating, which can cause confusion. The total power dissipation written PD in most American datasheets, Ptot in European ones depends on the heatsink to which the 2N is connected.

The device is designed to operate with an efficient heatsink, but care must be taken to mount the device properly, [7] [8] [9] else physical damage or worsened power handling may result, especially with cases or heatsinks that are not perfectly flat. Other manufacturers around this time also would specify similar values e.

RCA by had changed their specification to give 2. Modern 2N datasheets often, but not always, specify fT of 2. Nevertheless, a 2N and many other power transistors originating from this era cannot be assumed to have great high-frequency performance and there can be degradation of phase-shift and open-loop gain even within the audio frequency range.

Modern successors to the 2N can be much more suitable in fast-switching circuits or high-end audio power amplifiers. History[ edit ] RCA 2N The team of design, production, and applications engineers received RCA Electronic Components achievement awards in The 2N remains very popular as a series pass transistor in linear power supplies and is still used in for medium- current and high- power circuits generally, including low frequency power converters although its use in audio power amplifiers and DC-to-AC inverters is now less common and its use in higher frequency switch-mode applications never was very practical.

It was second sourced by other manufacturers; Texas Instruments listed a single-diffused mesa version of the device in an August datasheet. Mid s[ edit ] With changes to semiconductor manufacturing technology, the original process became economically uncompetitive in the mids, and a similar device was created using epitaxial base technology.

Also the higher frequency response has improved performance when used in audio amplifiers. Counterfeiting[ edit ] Since the early s, the 2N transistor has been heavily targeted by counterfeiters, who substitute much smaller silicon dies with lesser power ratings, use inferior mounting techniques, and fake the markings. It is by now unlikely to actually obtain a genuine 2N transistor when using popular sales platforms such as Amazon or Ebay; classic electronics distributors are mostly still able to properly source them.

An MJ PNP , which is also manufactured using the epitaxial process today, is a complementary transistor to the 2N In the sixties and early seventies, Philips produced similar devices encapsulated in TO-3 packages under the reference BDY20 described as being for "hifi" purposes and BDY38 although the BDY38 has lower voltage ratings than the 2N A Tesla KD transistor KD is a higher power equivalent used in Eastern Bloc countries, and is intended for general purpose applications.

It was produced exclusively by the Czechoslovakian electronics company Tesla. KD are packaged in a TO-3 case style called T41 by Tesla , it is a 20 amp , 80 volt , watt power transistor.

It has a transition frequency of 2. The KD have higher power and higher current than 2N Comparison of specifications.

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